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(R)
VN772K
QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS
TYPE VN772K
RDS(on) 120 m (*)
IOUT 9A (**)
VCC 36V
(*) Total resistance of one side in bridge configuration (**) Typical current limitation value
SUITED AS LOW VOLTAGE BRIDGE LINEAR CURRENT LIMITATION s VERY LOW STAND-BY POWER DISSIPATION s SHORT CIRCUIT PROTECTED s DOUBLE STATUS FLAG DIAGNOSTIC (OPEN DRAIN) s INTEGRATED CLAMPING CIRCUITS s UNDERVOLTAGE PROTECTION
s s s
SO-28
ESD PROTECTION high side switches have built-in thermal shutdown to protect the chips from overtemperature and current limiter blocks to protect the device from short circuit. Status output is provided to indicate open load in off and on state and overtemperature. The low side switches are two OMNIFET II types (fully autoprotected Power MOSFET in VIPowerTM technology). They have built-in thermal shutdown, linear current limitation and overvoltage clamping. Fault feedback for thermal intervention can be detected by monitoring the voltage at the input pin.
DESCRIPTION The VN772K is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two low side switches. Both the double high side and low side switches are made using |STMicroelectronics VIPowerTM M0-3 Technology. This device is suitable to drive a DC motor in a bridge configuration as well as to be used as a quad switch for any low voltage application. The dual PIN FUNCTION
No 1, 3, 25, 28 2 4, 11 5, 10, 19, 24 6 7 8 9 12, 14, 15, 18 13 16, 17 20, 21 22, 23 26, 27 NAME DRAIN 3 INPUT 3 N.C. VCC GND INPUT 1 DIAGNOSTIC INPUT 2 DRAIN 4 INPUT 4 SOURCE 4 SOURCE 2 SOURCE 1 SOURCE 3
FUNCTION Drain of Switch 3 (low-side switch) Input of Switch 3 (low-side switch) Not Connected Drain of Switches 1 and 2 (high-side switches) and Power Supply Voltage Ground of Switches 1 and 2 (high-side switches) Input of Switch 1 (high-side switches) Diagnostic of Switches 1 and 2 (high-side switches) Input of Switch 2 (high-side switch) Drain of switch 4 (low-side switch) Input of Switch 4 (low-side switch) Source of Switch 4 (low-side switch) Source of Switch 2 (high-side switch) Source of Switch 1 (high-side switch) Source of Switch 3 (low-side switch)
November 2002
1/21
1
VN772K
BLOCK DIAGRAM
Vcc
Vcc CLAMP
OVERVOLTAGE UNDERVOLTAGE
GND INPUT1 DIAG
DRIVER 1
CLAMP 1
SOURCE1
CLAMP 2 CURRENT LIMITER 1 OVERTEMP. 1 LOGIC OPENLOAD ON 1 DRIVER 2
SOURCE2
CURRENT LIMITER 2 OPENLOAD OFF 1 OPENLOAD ON 2
INPUT2
OPENLOAD OFF 2 OVERTEMP. 2
Overvoltage Clamp
DRAIN3
INPUT3
Gate Control
SOURCE3
Over Temperature
Linear Current Limiter
Overvoltage Clamp
DRAIN4
INPUT4
Gate Control
SOURCE4
Over Temperature
Linear Current Limiter
2/21
1
VN772K
CONNECTION DIAGRAM
THERMAL DATA
Symbol Rthj-case Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case (High-side switch) Thermal Resistance Junction-case (Low-side switch) Thermal Resistance Junction-ambient MAX MAX MAX Value 20 20 60 Unit C/W C/W C/W
ABSOLUTE MAXIMUM RATING DUAL HIGH SIDE SWITCH
Symbol VCC - VCC - IGND IOUT - IOUT IIN ISTAT Parameter DC Supply Voltage Reverse DC Supply Voltage DC Reverse Ground Pin Current DC Output Current Reverse DC Output Current DC Input Current DC Status Current Electrostatic Discharge (Human Body Model: R=1.5K; C=100pF) - INPUT - STATUS - OUTPUT Ptot Tj Tc Tstg - VCC Power Dissipation Tc=25C Junction Operating Temperature Case Operating Temperature Storage Temperature Value 41 - 0.3 - 200 Internally Limited -6 +/- 10 +/- 10 Unit V V mA A A mA mA
4000 4000 5000 5000 6 Internally Limited - 40 to 150 - 55 to 150
V V V V W C C C 3/21
VESD
1
VN772K
ABSOLUTE MAXIMUM RATING (continued) LOW SIDE SWITCHES
Symbol VDS VIN IIN RIN MIN ID IR VESD1 VESD2 Ptot Tj Parameter Drain-source Voltage (VIN=0V) Input Voltage Input Current Minimum Input Series Impedance Drain Current Reverse DC Output Current Electrostatic Discharge (R=1.5K, C=100pF) Electrostatic Discharge on output pin only (R=330, C=150pF) Power Dissipation (TC=25C) Operating Junction Temperature Value Internally Clamped Internally Clamped +/-20 150 Internally Limited -10.5 4000 16500 6 Internally limited Unit V V mA A A V V W C
ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (8VSymbol VCC (**) VUSD (**) VOV (**) RDS(on) Parameter Operating Supply Voltage Undervoltage Shut-down Overvoltage Shut-down On State Resistance Test Conditions Min 5.5 3 36 Typ 13 4 Max 36 5.5 60 12 12 5 0 -75 120 40 25 7 50 0 5 3 Unit V V V m m A A mA A A A A
IOUT=2A; Tj=25C IOUT=2A; VCC>8V Off State; VCC=13V; VIN=VOUT=0V Off State; VCC=13V; Tj =25C; VIN=VOUT=0V On State; VCC=13V VIN=VOUT=0V; VCC=36V; Tj=125C VIN=0V; VOUT=3.5V VIN=VOUT=0V; VCC=13V; Tj =125C VIN=VOUT=0V; VCC=13V; Tj =25C
IS (**)
Supply Current
IL(off1) IL(off2) IL(off3) IL(off4)
Off State Output Current Off State Output Current Off State Output Current Off State Output Current
SWITCHING (Per each channel) (VCC=13V)
Symbol td(on) td(off) dVOUT/ dt(on) dVOUT/ dt(off)
(**) Per device
Parameter Turn-on Delay Time Turn-off Delay Time Turn-on Voltage Slope
Test Conditions RL=6.5 from VIN rising edge to VOUT=1.3V RL=6.5 from VIN falling edge to VOUT=11.7V RL=6.5 from VOUT=1.3V to VOUT=10.4V RL=6.5 from VOUT=11.7V to VOUT=1.3V
Min
Typ 30 30 See relative diagram See relative diagram
Max
Unit s s V/s
Turn-off Voltage Slope
V/s
4/21
VN772K
ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued) INPUT PINS (Per each channel)
Symbol VIL IIL VIH IIH VI(hyst) VICL Parameter Input Low Level Low Level Input Current Input High Level High Level Input Current Input Hysteresis Voltage Input Clamp Voltage Test Conditions VIN=1.25V VIN=3.25V IIN=1mA IIN= -1mA 0.5 6.5 7.4 -0.7 Min 1 3.25 10 8.5 Typ Max 1.25 Unit V A V A V V V
LOGIC INPUT (Per each channel)
Symbol VIL IIL VIH IIH VI(hyst) VICL Parameter Input Low Level Low Level Input Current Input High Level High Level Input Current Input Hysteresis Voltage Input Clamp Voltage Test Conditions VIN = 1.25V VIN = 3.25V IIN = 1mA IIN = -1mA 0.5 6 6.8 -0.7 Min 1 3.25 10 8 Typ Max 1.25 Unit V A V A V V V
STATUS PIN (Per each channel)
Symbol VSTAT ILSTAT CSTAT VSCL Parameter Test Conditions Status Low Output Voltage ISTAT= 1.6 mA Status Leakage Current Normal Operation; VSTAT= 5V Status Pin Input Normal Operation; VSTAT= 5V Capacitance ISTAT= 1mA Status Clamp Voltage ISTAT= - 1mA Min Typ Max 0.5 10 100 6 6.8 -0.7 8 Unit V A pF V V
PROTECTIONS (Per each channel)
Symbol TTSD TR Thyst tSDL Ilim Parameter Shut-down Temperature Reset Temperature Thermal Hysteresis Status Delay in Overload Conditions Current limitation Turn-off Output Clamp Voltage Test Conditions Min 150 135 7 Typ 175 15 20 6 8.5 9 15 15 15 VCC-41 VCC-48 VCC-55 Max 200 Unit C C C s A A A V
Tj>TTSD Tj=125C
5.5VVdemag
5/21
1
VN772K
ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued) OPENLOAD DETECTION (Per each channel)
Symbol IOL tDOL(on) VOL TDOL(off) Parameter Openload ON State Detection Threshold Openload ON State Detection Delay Openload OFF State Voltage Detection Threshold Openload Detection Delay at Turn Off Test Conditions VIN=5V IOUT=0A VIN=0V 1.5 2.5 Min 50 Typ 100 Max 200 200 3.5 1000 Unit mA s V s
6/21
VN772K
ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (-40C < Tj < 150C, unless otherwise specified) OFF
Symbol VCLAMP VCLTH VINTH IISS VINCL IDSS Parameter Drain-source Clamp Voltage Drain-source Clamp Threshold Voltage Input Threshold Voltage Supply Current from Input Pin Input-Source Clamp Voltage Zero Input Voltage Drain Current (VIN=0V) Test Conditions VIN=0V; ID=3.5A VIN=0V; ID=2mA VDS=VIN; ID=1mA VDS=0V; VIN=5V IIN=1mA IIN=-1mA VDS=13V; VIN=0V; Tj=25C VDS=25V; VIN=0V 6 -1.0 Min 40 36 0.5 100 6.8 2.5 150 8 -0.3 30 75 Typ 45 Max 55 Unit V V V A V A
ON
Symbol RDS(on) Parameter Static Drain-source On Resistance Test Conditions VIN=5V; ID=3.5A; Tj=25C VIN=5V; ID=3.5A Min Typ Max 60 120 Unit m
(Tj=25C, unless otherwise specified) DYNAMIC
Symbol gfs (*) COSS Parameter Forward Transconductance Output Capacitance Test Conditions VDD=13V; ID=3.5A VDS=13V; f=1MHz; VIN=0V Min Typ 9 220 Max Unit S pF
SWITCHING
Symbol td(on) tr td(off) tf td(on) tr td(off) tf (dI/dt)on Qi Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Current Slope Total Input Charge Test Conditions VDD=15V; ID=3.5A Vgen=5V; Rgen=RIN MIN=150 Min Typ 100 470 500 350 0.75 4.6 5.4 3.6 6.5 18 Max 300 1500 1500 1000 2.3 14.0 16.0 11.0 Unit ns ns ns ns s s s s A/s nC
VDD=15V; ID=3.5A Vgen=5V; Rgen=2.2K VDD=15V; ID=3.5A Vgen=5V; Rgen=RIN MIN=150 VDD=12V; ID=3.5A; VIN=5V Igen=2.13mA
SOURCE DRAIN DIODE
Symbol VSD (*) trr Qrr IRRM Parameter Test Conditions Forward On Voltage ISD=3.5A; VIN=0V Reverse Recovery Time ISD=3.5A; dI/dt=20A/s Reverse Recovery Charge VDD=30V; L=200H Reverse Recovery Current Min Typ 0.8 220 0.28 2.5 Max Unit V ns C A
7/21
VN772K
ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (continued) PROTECTIONS (-40C < Tj < 150C, unless otherwise specified)
Symbol Ilim tdlim Tjsh Tjrs Igf Eas Parameter Drain Current Limit Step Response Current Limit Overtemperature Shutdown Overtemperature Reset Fault Sink Current Single Pulse Avalanche Energy Test Conditions VIN=5V; VDS=13V VIN=5V; VDS=13V; Tj=125C VIN=5V; VDS=13V Min 6 6.5 4.0 150 135 VIN= 5V; VDS=13V; Tj=Tjsh starting Tj=25C; VDD=24V VIN=5V; Rgen=RIN MIN=150; L=24mH 15 200 175 Typ 9 Max 12 12 Unit A A s C C mA mJ
(*) Pulsed: Pulse duration = 300s, duty cycle 1.5%
8/21
VN772K
DUAL HIGH-SIDE SWITCH SWITCHING TIME WAVEFORMS
VOUTn 90% 80%
dVOUT/dt(on)
dVOUT/dt(off)
10% t VINn
td(on)
td(off)
t
TRUTH TABLE
CONDITIONS Normal Operation Current Limitation Overtemperature Undervoltage Overvoltage Output Voltage > VOL Output Current < IOL INPUT L H L H H L H L H L H L H L H OUTPUT L H L X X L L L L L L H H L H STATUS H H H (Tj < TTSD) H (Tj > TTSD) L H L X X H H L H H L OVER TEMP STATUS TIMING Tj > TTSD VINn
OPEN LOAD STATUS TIMING (with external pull-up) IOUT < IOL VOUT> VOL VINn
VSTAT n
VSTAT n tSDL tDOL(off) tDOL(on) 9/21 tSDL
1
VN772K
TYPICAL APPLICATION DIAGRAM
10/21
1
VN772K
Figure1: Waveforms
NORMAL OPERATION INPUTn OUTPUT VOLTAGEn STATUSn UNDERVOLTAGE VCC INPUTn OUTPUT VOLTAGEn STATUSn undefined
VUSD VUSDhyst
OVERVOLTAGE
VCCV OV
VCC INPUTn OUTPUT VOLTAGEn STATUSn OPEN LOAD with external pull-up INPUTn OUTPUT VOLTAGEn STATUSn OPEN LOAD without external pull-up INPUTn OUTPUT VOLTAGEn STATUSn OVERTEMPERATURE Tj INPUTn OUTPUT CURRENTn STATUSn
TTSD TR VOUT>VOL
VOL
11/21
1
VN772K
ELECTRICAL CHARACTERIZATION FOR DUAL HIGH SIDE SWITCH Off State Output Current
IL(off1) (uA)
2.5 2.25 2 1.75 1.5 1.25 1 0.75 0.5 0.25 0 -50 -25 0 25 50 75 100 125 150 175
High Level Input Current
Iih (uA)
5 4.5
Off state Vcc=36V Vin=Vout=0V
Vin=3.25V
4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 175
Tc (C)
Tc (C)
Input Clamp Voltage
Vicl (V)
8 7.8
Status Leakage Current
Ilstat (uA)
0.05
Iin=1mA
7.6 7.4 7.2 7 6.8 6.6 6.4 6.2 6 -50 -25 0 25 50 75 100 125 150 175 0 -50 -25 0 25 50 75 100 125 150 175 0.01 0.02 0.03 0.04
Vstat=5V
Tc (C)
Tc (C)
Status Low Output Voltage
Vstat (V)
0.8 0.7
Status Clamp Voltage
Vscl (V)
8 7.8
Istat=1.6mA
0.6
Istat=1mA
7.6 7.4
0.5 0.4 0.3 0.2
7.2 7 6.8 6.6 6.4
0.1 0 -50 -25 0 25 50 75 100 125 150 175
6.2 6 -50 -25 0 25 50 75 100 125 150 175
Tc (C)
Tc (C)
12/21
VN772K
ELECTRICAL CHARACTERIZATION FOR DUAL HIGH SIDE SWITCH (continued) On State Resistance Vs Tcase
Ron (mOhm)
160 140 120 100 70 80 60 40 40 20 10 0 -50 -25 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40 30 20 60 50
On State Resistance Vs VCC
Ron (mOhm)
120 110
Tc=150C
Iout=2A Vcc=8V; 13V & 36V
100 90 80
Tc=25C
Tc= - 40C
Iout=5A
Tc (C)
Vcc (V)
Openload On State Detection Threshold
Iol (mA)
150 140 130 120 110 100 90 80
Input High Level
Vih (V)
3.6 3.4
Vcc=13V Vin=5V
3.2 3 2.8 2.6 2.4
70 60 50 -50 -25 0 25 50 75 100 125 150 175 2.2 2 -50 -25 0 25 50 75 100 125 150 175
Tc (C)
Tc (C)
Input Low Level
Vil (V)
2.6 2.4 2.2
Input Hysteresis Voltage
Vhyst (V)
1.5 1.4 1.3 1.2
2 1.8 1.6 1.4
1.1 1 0.9 0.8 0.7
1.2 1 -50 -25 0 25 50 75 100 125 150 175
0.6 0.5 -50 -25 0 25 50 75 100 125 150 175
Tc (C)
Tc (C)
13/21
VN772K
ELECTRICAL CHARACTERIZATION FOR DUAL HIGH SIDE SWITCH (continued) Overvoltage Shutdown
Vov (V)
50 48 46 44 42 40 38 36 34 32 30 -50 -25 0 25 50 75 100 125 150 175
Openload Off State Voltage Detection Threshold
Vol (V)
5 4.5
Vin=0V
4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 175
Tc (C)
Tc (C)
Turn-on Voltage Slope
dVout/dt(on) (V/ms)
800 700 600 500 400 300 200 100 0 -50 -25 0 25 50 75 100 125 150 175
Turn-off Voltage Slope
dVout/dt(off) (V/ms)
600 550 500 450 400 350 300 250 200 -50 -25 0 25 50 75 100 125 150 175
Vcc=13V Rl=6.5Ohm
Vcc=13V Rl=6.5Ohm
Tc (C)
Tc (C)
ILIM Vs Tcase
Ilim (A)
20 18
Vcc=13V
16 14 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 175
Tc (C)
14/21
VN772K
ELECTRICAL CHARACTERIZATION FOR LOW SIDE SWITCHES Static Drain Source On Resistance Source-Drain Diode Forward Characteristics
Vsd (mV)
1000 950
Rds(on) (mOhm)
500
Tj= - 40C
450
Vin=0V
900 850 800 750 700 650 600 550 500 0 2 4 6 8 10 12 14 400 350 300 250 200 150 100 50 0 0 0.25 0.5
Vin=2.5V
Tj=25C
Tj=150C
0.75
1
1.25
Id(A)
Id(A)
Derating Curve
Static Drain-Source On resistance Vs. Input Voltage
Rds(on) (mOhm)
120 110 100 90 80 70 60 50 40 30 20 10 0 3 3.5 4 4.5 5 5.5 6 6.5 7
Tj= - 40C Tj=25C
Id=3.5A
Tj=150C
Vin(V)
Static Drain-Source On resistance Vs. Input Voltage
Rds(on) (mOhm)
140
Transconductance
Gfs (S)
20 18
120
Tj=150C
Vds=13V
16 14
Id=6A Id=1A Tj=-40C Tj=25C Tj=150C
100
80
12 10
60
Tj=25C
8
Tj=-40C Id=6A Id=1A Id=6A Id=1A
40
6 4 2
20
0 3 3.5 4 4.5 5 5.5 6 6.5
0 0 1 2 3 4 5 6 7 8
Vin(V)
Id(A)
15/21
VN772K
ELECTRICAL CHARACTERIZATION FOR LOW SIDE SWITCHES (continued) Static Drain-Source On Resistance Vs. Id Transfer Characteristics
Rds(on) (mOhm)
140
Idon(A)
10 9
Tj=25C Tj=-40C Tj=150C
120
Vin=3.5V
Vds=13.5V
8 7
Vin=5V Tj=150C
100
80
6 5
60
Tj=25C
Vin=3.5V Vin=5V Vin=3.5V Tj=-40C Vin=5V
4 3 2 1
40
20
0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
Id(A)
Vin(V)
Turn On Current Slope
di/dt(A/us)
8 7 6 5 4 3 2 1 0 100 200 300 400 500 600 700 800 900 1000 1100
Turn On Current Slope
di/dt(A/us)
2.25 2
Vin=5V Vdd=15V Id=3.5A
1.75 1.5 1.25 1 0.75 0.5 0.25 100 200 300 400 500 600 700
Vin=3.5V Vdd=15V Id=3.5A
800
900 1000 1100
Rg(ohm)
Rg(ohm)
Input Voltage Vs. Input Charge
Vin(V)
8 7 6 5
Turn off drain source voltage slope
dv/dt(V/us)
300
250
Vds=12V Id=3.5A
200
Vin=5V Vdd=15V Id=3.5A
150 4 3 2 1 0 0 0 5 10 15 20 25 100 200 300 400 500 600 700 800 900 1000 1100 100
50
Qg(nC)
Rg(ohm)
16/21
VN772K
ELECTRICAL CHARACTERIZATION FOR LOW SIDE SWITCHES (continued) Turn Off Drain-Source Voltage Slope Capacitance Variations
dv/dt(v/us)
300
C(pF)
600
250
500
200
Vin=3.5V Vdd=15V Id=3.5A
f=1MHz Vin=0V
400
150
300
100
50
200
0 100 200 300 400 500 600 700 800 900 1000 1100
100 0 5 10 15 20 25 30 35
Rg(ohm)
Vds(V)
Switching Time Resistive Load
t(us)
5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 250 500 750 1000 1250 1500 1750 2000 2250 2500
Switching Time Resistive Load
t(ns)
1600
tr Vdd=15V Id=3.5A Vin=5V tr td(off)
1200 1400
tf
1000 800 600
Vdd=15V Id=3.5A Rg=150ohm
td(off)
400
td(on)
200
tf
td(on)
0 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25
Rg(ohm)
Vin(V)
Output Characteristics
ID(A)
12 11 10 9 8 7 6 5 4
Vin=3V Vin=5V Vin=4.5V Vin=4V
Normalized On Resistance Vs. Temperature
Rds(on)
2.25
2
1.75
Vin=5V Id=3.5A
1.5
1.25
1 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13
Vin=2.5V
0.75
Vin=2V
0.5 -50 -25 0 25 50 75 100 125 150 175
VDS(V)
T(C)
17/21
VN772K
ELECTRICAL CHARACTERIZATION FOR LOW SIDE SWITCHES (continued) Normalized Input Threshold Voltage Vs. Current Limit Vs. Junction Temperature Temperature
Vin(th)
1.15 1.1 1.05 1 0.95 10 0.9 9 0.85 0.8 0.75 0.7 -50 -25 0 25 50 75 100 125 150 175 8 7 6 5 -50 -25 0 25 50 75 100 125 150 175
Ilim (A)
15 14
Vds=Vin Id=1mA
13 12 11
Vds=13V Vin=5V
T(C)
Tj (C)
Step Response Current Limit
Tdlim(us)
7
6.5
6
Vin=5V Rg=150ohm
5.5
5
4.5
4
3.5 5 10 15 20 25 30 35
Vdd(V)
18/21
VN772K
SO-28 MECHANICAL DATA
DIM. A a1 b b1 C c1 D E e e3 F L S 7.40 0.40 17.7 10.00 1.27 16.51 7.60 1.27 8 (max.) 0.291 0.016 18.1 10.65 0.10 0.35 0.23 0.50 45 (typ.) 0.697 0.393 0.050 0.650 0.299 0.050 0.713 0.419 mm. MIN. TYP MAX. 2.65 0.30 0.49 0.32 0.004 0.013 0.009 0.020 MIN. inch TYP. MAX. 0.104 0.012 0.019 0.012
19/21
VN772K
SO-28 TUBE SHIPMENT (no suffix) Base Q.ty Bulk Q.ty Tube length ( 0.5) A B C ( 0.1)
All dimensions are in mm.
A
C B
28 700 532 3.5 13.8 0.6
TAPE AND REEL SHIPMENT (suffix "13TR") REEL DIMENSIONS
Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max) 1000 1000 330 1.5 13 20.2 16.4 60 22.4
TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 16 4 12 1.5 1.5 7.5 6.5 2
End
All dimensions are in mm.
Start Top cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min No components Components No components
20/21
VN772K
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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